The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2016

Filed:

Dec. 29, 2014
Applicant:

Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, CN;

Inventors:

Lei Xiong, Shanghai, CN;

Pei Xi, Shanghai, CN;

Zhenxing Zhang, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01);
Abstract

A method for forming a magnetic sensor includes: forming a hard mask film on a tantalum nitride film; forming a patterned photoresist layer on the hard mask film; implementing an isotropic dry etching process to the hard mask film by taking the photoresist layer as a mask, so as to form a hard mask layer; and implementing an etching process to the tantalum nitride film and the magnetic film by taking the hard mask layer as a mask, so as to form a tantalum nitride layer and a magnetic resistive layer. As an isotropic dry etching process is implemented to the hard mask film, the hard mask film located which is above the other sidewalls and is not used for forming the magnetic sensor can be effectively removed. In addition, shadow effect will not take place, thus dimension of the magnetic sensor formed is able to be easily controlled.


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