The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Jul. 27, 2015
United Microelectronics Corp., Hsinchu, TW;
Liang Yi, Singapore, SG;
Ko-Chi Chen, Taoyuan, TW;
Shen-De Wang, Hsinchu County, TW;
Chia-Ching Hsu, Singapore, SG;
Chun-Sung Huang, Changhua County, TW;
Wen-Peng Hsu, New Taipei, TW;
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Abstract
A split gate NVM device includes a semiconductor substrate, an ONO structure disposed on the semiconductor substrate, a first gate electrode disposed on the ONO structure, a second gate electrode disposed on the semiconductor substrate, adjacent to and insulated from the first gate electrode and the ONO structure, a first doping region with a first conductivity formed in the semiconductor substrate and adjacent to the ONO structure, a second doping region with the first conductivity formed in the semiconductor substrate and adjacent to the second gate electrode, and a third doping region with the first conductivity formed in the semiconductor substrate, disposed between the first doping region and the second doping region and adjacent to the ONO structure and the second gate electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile