The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Jan. 05, 2015
Silicon Storage Technology, Inc., San Jose, CA (US);
Chun-Ming Chen, New Taipei, TW;
Man-Tang Wu, Hsinchu County, TW;
Jeng-Wei Yang, Zhubei, TW;
Chien-Sheng Su, Saratoga, CA (US);
Silicon Storage Technology, Inc., San Jose, CA (US);
Abstract
A non-volatile memory cell includes a substrate of a first conductivity type, having a first region of a second conductivity type, a second region of the second conductivity type spaced apart from the first region, forming a channel region therebetween. A floating gate is disposed over and insulated from a first portion of the channel region which is adjacent the first region. A select gate is disposed over a second portion of the channel region adjacent to the second region, the select gate being formed of a metal material and being insulated from the second portion of the channel region by a layer of silicon dioxide and a layer of high K insulating material. A control gate is disposed over and insulated from the floating gate. An erase gate is disposed over and insulated from the first region, and disposed laterally adjacent to and insulated from the floating gate.