The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Apr. 30, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Clement Hsingjen Wann, Carmel, NY (US);
Ling-Yen Yeh, Hsin-Chu, TW;
Chi-Wen Liu, Hsin-Chu, TW;
Chi-Yuan Shih, Hsin-Chu, TW;
Li-Chi Yu, Jhubei, TW;
Meng-Chun Chang, Taipei, TW;
Ting-Chu Ko, Hsin-Chu, TW;
Chung-Hsien Chen, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of fabricating a semiconductor device comprises forming a fin structure extending from a substrate, the fin structure comprising a first fin, a second fin, and a third fin between the first fin and the second fin. The method further comprises forming germanide over a first facet of the first fin, a second facet of the second fin, and a substantially planar surface of the third fin, wherein the first facet forms a first acute angle with a major surface of the substrate and is substantially mirror symmetric with the second facet, and wherein the substantially planar surface of the third fin forms a second acute angle smaller than the first acute angle with the major surface of the substrate.