The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Aug. 07, 2013
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Makoto Kawai, Annaka, JP;
Yoshihiro Kubota, Annaka, JP;
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Abstract
The present invention relates to a method for producing a nanocarbon film using a hybrid substrate with which a nanocarbon film free from defects can be produced at low cost. This method is characterized in forming an ion implantation region by implanting ion into a single crystal silicon carbide substrate from a surface thereof and after bonding together the surface of the silicon carbide substrate implanted with ion and a surface of a base substrate, releasing the silicon carbide substrate at the ion implanted region to produce a hybrid substrate in which a thin film that includes the single crystal silicon carbide is transferred onto the base substrate, and then heating the hybrid substrate to sublime silicon atoms from the thin film that includes the single crystal silicon carbide so as to obtain the nanocarbon film.