The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2016

Filed:

Sep. 30, 2013
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Takehisa Saito, Miyagi, JP;

Atsutoshi Inokuchi, Miyagi, JP;

Shogo Masuda, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/471 (2006.01); H01L 21/02 (2006.01); C23C 16/511 (2006.01); C23C 16/04 (2006.01); C23C 16/34 (2006.01); C23C 16/56 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0226 (2013.01); C23C 16/045 (2013.01); C23C 16/345 (2013.01); C23C 16/511 (2013.01); C23C 16/56 (2013.01); H01J 37/32192 (2013.01); H01J 37/32238 (2013.01); H01J 37/32449 (2013.01); H01L 21/0217 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01); H01L 21/02329 (2013.01);
Abstract

Disclosed is a method for depositing an insulating film with a high coverage through a low temperature process. The deposition method deposits an insulating film on a substrate using a deposition apparatus which includes a processing container that defines a processing space in which plasma is generated, a gas supply unit configured to supply a gas into the processing space, and a plasma generating unit configured to generate plasma by supplying microwave into the processing container. The deposition method includes depositing an insulating film that includes SiN on the substrate by supplying into a gas formed by adding Hto trisilylamine into the processing container and generating plasma.


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