The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2016
Filed:
Feb. 06, 2012
Tai-chun Lin, Tainan, TW;
Wen-tsao Chen, Tainan, TW;
Chih-ho Tai, Tainan, TW;
Ming-ray Mao, Tainan, TW;
Kuan-chi Tsai, Kaohsiung, TW;
Tai-Chun Lin, Tainan, TW;
Wen-Tsao Chen, Tainan, TW;
Chih-Ho Tai, Tainan, TW;
Ming-Ray Mao, Tainan, TW;
Kuan-Chi Tsai, Kaohsiung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Disclosed embodiments include a capacitor structure and a method for forming a capacitor structure. An embodiment is a structure comprising a conductor-insulator-conductor capacitor on a substrate. The conductor-insulator-conductor capacitor comprises a first conductor on the substrate, a dielectric stack over the first conductor, and a second conductor over the dielectric stack. The dielectric stack comprises a first nitride layer, a first oxide layer over the first nitride layer, and a second nitride layer over the first oxide layer. A further embodiment is a method comprising forming a first conductor on a substrate; forming a first nitride layer over the first conductor; treating the first nitride layer with a first nitrous oxide (NO) treatment to form an oxide layer on the first nitride layer; forming a second nitride layer over the oxide layer; and forming a second conductor over the second nitride layer.