The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2016

Filed:

Aug. 25, 2015
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Yu Chao Lin, Hsinchu, TW;

Chia-Hao Hsu, Hsinchu, TW;

Kuo-Yu Wu, Miaoli County, TW;

Chia-Jen Chen, Chiayi, TW;

Chao-Cheng Chen, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); G03F 7/20 (2006.01); H01L 21/033 (2006.01); G03F 7/00 (2006.01); G03F 7/075 (2006.01); G03F 7/09 (2006.01); G03F 7/095 (2006.01); G03F 7/40 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); G03F 7/0035 (2013.01); G03F 7/0752 (2013.01); G03F 7/091 (2013.01); G03F 7/095 (2013.01); G03F 7/40 (2013.01); G03F 7/70633 (2013.01); H01L 21/0276 (2013.01); H01L 21/0337 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01);
Abstract

A method of calibrating or monitoring an exposing tool including forming a substrate pattern in a substrate, wherein forming the substrate pattern includes providing a first patterned photo resist layer having an etch coating layer disposed thereon and using the first patterned photo resist layer and the etch coating layer to pattern an underlying layer. The patterned underlying layer is then used as a masking element when etching the substrate pattern into the substrate. A second photo resist pattern is formed over the substrate pattern. An overlay measurement is executed of the second photo resist pattern to the substrate pattern.


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