The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2016
Filed:
Mar. 29, 2012
Gosse Charles DE Vries, Veldhoven, NL;
Jan Bernard Plechelmus Van Schoot, Eindhoven, NL;
Franciscus Johannes Joseph Janssen, Geldrop, NL;
Nicolaas Aldegonda Jan Maria Van Aerle, Eindhoven, NL;
Gosse Charles De Vries, Veldhoven, NL;
Jan Bernard Plechelmus Van Schoot, Eindhoven, NL;
Franciscus Johannes Joseph Janssen, Geldrop, NL;
Nicolaas Aldegonda Jan Maria Van Aerle, Eindhoven, NL;
ASML Netherlands B.V., Veldhoven, NL;
Abstract
In an EUV (extreme ultraviolet) lithography apparatus, an illumination system includes a multifaceted field mirror and a multifaceted pupil mirror. A field facet mirror within mirror focuses EUV radiation onto a particular associated pupil facet mirror, from where it is directed to a target area. Each field facet mirror is modified to scatter unwanted DUV (deep ultraviolet) radiation into a range of directions. The majority of DUV falls onto neighboring pupil facet mirrors within the pupil mirrors, so that the amount of DUV radiation reaching target E is suppressed in comparison to the wanted EUV radiation. Because the distance between mirrors is much greater than the width of an individual pupil facet mirror, good DUV suppression can be achieved with only a narrow scattering angle. Absorption of EUV radiation in the scattering layer can be minimized.