The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2016
Filed:
Jul. 21, 2011
Martinus Bernardus Van Der Mark, Best, NL;
Vadim Yevgenyevich Banine, Deurne, NL;
Andre Bernardus Jeunink, Bergeijk, NL;
Johan Frederik Dijksman, Weert, NL;
Sander Frederik Wuister, Eindhoven, NL;
Emiel Andreas Godefridus Peeters, Eindhoven, NL;
Johan Hendrik Klootwijk, Eindhoven, NL;
Roelof Koole, Eindhoven, NL;
Christianus Martinus Van Heesch, Eindhoven, NL;
Ruediger Guenter Mauczok, Erkelenz, DE;
Jacobus Bernardus Giesbers, Son en Breugel, NL;
Martinus Bernardus Van Der Mark, Best, NL;
Vadim Yevgenyevich Banine, Deurne, NL;
Andre Bernardus Jeunink, Bergeijk, NL;
Johan Frederik Dijksman, Weert, NL;
Sander Frederik Wuister, Eindhoven, NL;
Emiel Andreas Godefridus Peeters, Eindhoven, NL;
Johan Hendrik Klootwijk, Eindhoven, NL;
Roelof Koole, Eindhoven, NL;
Christianus Martinus Van Heesch, Eindhoven, NL;
Ruediger Guenter Mauczok, Erkelenz, DE;
Jacobus Bernardus Giesbers, Son en Breugel, NL;
ASML NETHERLANDS B.V., Veldhoven, NL;
Abstract
An imprint lithography method is disclosed for reducing a difference between an intended topography and an actual topography arising from a part of a patterned layer of fixed imprintable medium. The method involves imprinting an imprint lithography template into a layer of flowable imprintable medium to form a patterned layer in the imprintable medium, and fixing the imprintable medium to form a patterned layer of fixed imprintable medium. Local excitation is applied to the part of the patterned layer to adjust a chemical reaction in the part of the patterned layer to reduce the difference between the intended topography and the actual topography arising from the part of the fixed patterned layer of imprintable medium when this is subsequently used as a resist for patterning the substrate. An imprint medium suitable for imprint lithography with the method is also disclosed.