The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2016

Filed:

Nov. 27, 2013
Applicant:

Stats Chippac, Ltd., Singapore, SG;

Inventors:

Yaojian Lin, Singapore, SG;

Kai Liu, Phoenix, AZ (US);

Kang Chen, Singapore, SG;

Assignee:

STATS ChipPAC Pte. Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 49/02 (2006.01); H01L 21/56 (2006.01); H01L 23/522 (2006.01); H01L 23/538 (2006.01); H01L 25/16 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H03H 1/00 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 28/10 (2013.01); H01L 21/561 (2013.01); H01L 23/3121 (2013.01); H01L 23/3128 (2013.01); H01L 23/5223 (2013.01); H01L 23/5227 (2013.01); H01L 23/5389 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/96 (2013.01); H01L 24/97 (2013.01); H01L 25/16 (2013.01); H01L 21/568 (2013.01); H01L 23/49816 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/24137 (2013.01); H01L 2224/24195 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01073 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/1206 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01); H01L 2924/19042 (2013.01); H01L 2924/30107 (2013.01); H03H 2001/0078 (2013.01);
Abstract

A semiconductor device has a first semiconductor die. A first inductor is formed over the first semiconductor die. A second inductor is formed over the first inductor and aligned with the first inductor. An insulating layer is formed over the first semiconductor die and the first and second inductors. A conductive bridge is formed over the insulating layer and electrically connected between the second inductor and the first semiconductor die. In one embodiment, the semiconductor device has a second semiconductor die and a conductive layer is formed between the first and second semiconductor die. In another embodiment, a capacitor is formed over the first semiconductor die. In another embodiment, the insulating layer has a first thickness over a footprint of the first semiconductor die and a second thickness less than the first thickness outside the footprint of the first semiconductor die.


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