The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2016

Filed:

Jan. 20, 2015
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Derek C. Tao, Hsinchu, TW;

Jacklyn Chang, Hsinchu, TW;

Kuoyuan (Peter) Hsu, Hsinchu, TW;

Yukit Tang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/02 (2006.01); G11C 5/06 (2006.01); H01L 23/50 (2006.01); H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 23/50 (2013.01); H01L 21/76877 (2013.01); H01L 23/481 (2013.01); G11C 5/02 (2013.01); G11C 5/06 (2013.01); G11C 2213/71 (2013.01); H01L 27/0688 (2013.01); H01L 2224/73265 (2013.01);
Abstract

A memory includes a plurality of memory cells. A first line is over the plurality of memory cells. The first line in a first layout section includes a first metal layer and a second metal layer. The second metal layer is over the first metal layer. A second line is over the plurality of memory cells. The second line in the first layout section includes the first metal layer and a third metal layer. The third metal layer is over the second metal layer The first line is electrically isolated from the second line. The first line and the second line extend in a same direction.


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