The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2016

Filed:

Aug. 20, 2014
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Tadahiro Ishizaka, Yamanashi, JP;

Kenji Suzuki, Yamanashi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/00 (2006.01); C23C 14/16 (2006.01); C23C 14/35 (2006.01); H01J 37/34 (2006.01); H01J 37/32 (2006.01); H01L 21/285 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/00 (2013.01); C23C 14/165 (2013.01); C23C 14/358 (2013.01); H01J 37/32899 (2013.01); H01J 37/34 (2013.01); H01J 37/3429 (2013.01); H01L 21/76843 (2013.01); H01L 21/76847 (2013.01); H01L 21/76849 (2013.01); H01L 21/76858 (2013.01); H01L 21/76876 (2013.01); H01L 21/76877 (2013.01); H01L 21/76883 (2013.01); H01L 23/53238 (2013.01); H01L 21/2855 (2013.01); H01L 23/53233 (2013.01); H01L 2924/0002 (2013.01);
Abstract

In a Cu wiring structure forming method, a barrier film serving as a Cu diffusion barrier is formed at least on a surface of a recess in a first insulating film formed on a substrate, and the recess is filled with an Al-containing Cu film. A Cu wiring is formed from the Al-containing Cu film, and a cap layer including a Ru film is formed on the Cu wiring. Further, an interface layer containing a Ru—Al alloy is formed at an interface between the Cu wiring and the cap layer by heat generated in forming the cap layer or by a heat treatment performed after forming the cap layer. A second insulating film is formed on the cap layer.


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