The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Aug. 10, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chung-Yen Chou, Hsinchu, TW;
Po-Ken Lin, Hsinchu, TW;
Chia-Shiung Tsai, Hsinchu, TW;
Ru-Liang Lee, Hsinchu, TW;
Abstract
A capacitive device includes a substrate, a well structure buried in the substrate, a first stacked layer that includes a first dielectric layer and a first conductive layer, a cap dielectric layer, and a first electrode. The well has a predetermined doping type. The well includes a first shoulder portion having an upper surface, a second shoulder portion having an upper surface, and a first trench between the first and second shoulder portions. The first trench has sidewalls and a bottom surface. The first dielectric layer is lined along at least a portion of the upper surfaces of the first and second shoulder portions, the sidewalls of the first trench, and the bottom surface of the first trench. The first conductive layer is lined along the first dielectric layer. The cap dielectric layer is over the well, the first dielectric layer, and the first conductive layer. The first electrode is in contact with the first shoulder portion and extends through the cap dielectric layer, the first conductive layer, and the first dielectric layer.