The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Aug. 16, 2013
Qualcomm Incorporated, San Diego, CA (US);
Daeik Daniel Kim, San Diego, CA (US);
Young Kyu Song, San Diego, CA (US);
Changhan Hobie Yun, San Diego, CA (US);
Mario Francisco Velez, San Diego, CA (US);
Chengjie Zuo, Santee, CA (US);
Jonghae Kim, San Diego, CA (US);
Xiaonan Zhang, San Diego, CA (US);
Ryan David Lane, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Some novel features pertain to a semiconductor device that includes a substrate, a first cavity that traverses the substrate. The first cavity is configured to be occupied by a interconnect material (e.g., solder ball). The substrate also includes a first metal layer coupled to a first side wall of the first cavity. The substrate further includes a first integrated passive device (IPD) on a first surface of the substrate, the first IPD coupled to the first metal layer. In some implementations, the substrate is a glass substrate. In some implementations, the first IPD is one of at least a capacitor, an inductor and/or a resistor. In some implementations, the semiconductor device further includes a second integrated passive device (IPD) on a second surface of the substrate. The second IPD is coupled to the first metal layer.