The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2016

Filed:

Mar. 14, 2014
Applicant:

Semprius, Inc., Durham, NC (US);

Inventors:

Matthew Meitl, Durham, NC (US);

Scott Burroughs, Raleigh, NC (US);

Assignee:

Semprius, Inc., Durham, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/76 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02521 (2013.01); H01L 21/02645 (2013.01); H01L 21/02647 (2013.01);
Abstract

In a method for fabricating an engineered substrate for semiconductor epitaxy, an array of seed structures is assembled on a surface of the substrate. The seed structures in the array have substantially similar directional orientations of their crystal lattices, and are spatially separated from each other. Semiconductor materials are selectively epitaxially grown on the seed structures, such that a rate of growth of the semiconductor materials on the seed structures is substantially higher than a rate of growth of the semiconductor materials on regions of the surface. The semiconductor materials assume a lattice constant and directional orientation of crystal lattice that are substantially similar or identical to those of the seed structures. Related devices and methods are also discussed.


Find Patent Forward Citations

Loading…