The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2016
Filed:
Jul. 31, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Huei-Ru Liou, Luzhu Township, TW;
Chien-Chih Chou, New Taipei, TW;
Kong-Beng Thei, Hsin-Chu Country, TW;
Gwo-Yuh Shiau, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Dummy structures between a high voltage (HV) region and a low voltage (LV) region of a substrate are disclosed, along with methods of forming the dummy structures. An embodiment is a structure comprising a HV gate dielectric over a HV region of a substrate, a LV gate dielectric over a LV region of the substrate, and a dummy structure over a top surface of the HV gate dielectric. A thickness of the LV gate dielectric is less than a thickness of the HV gate dielectric. The dummy structure is on a sidewall of the HV gate dielectric.