The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2016
Filed:
Jun. 05, 2015
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Tzu-Jui Wang, Kaohsiung, TW;
Keng-Yu Chou, Kaohsiung, TW;
Chun-Hao Chuang, Hsinchu, TW;
Ming-Chieh Hsu, Hsinchu, TW;
Ren-Jie Lin, Tainan, TW;
Jen-Cheng Liu, Hsinchu, TW;
Dun-Nian Yaung, Taipei, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
A method for forming a photo diode is provided. The method includes: forming a first pair of electrodes and a second pair of electrodes over a substrate by using a conductive layer; forming a dielectric layer over the substrate; patterning the dielectric layer over the substrate; forming a photo conversion layer over the substrate; and forming a color filter layer over the photo conversion layer, wherein at least a portion of the dielectric layer separates a first portion of the color filter layer corresponding to a first pixel from a second portion of the color filter layer corresponding to a second pixel, and a refractive index of the dielectric layer is lower than a refractive index of the color filter layer, wherein the first pair of electrodes corresponds to the first pixel and the second pair of electrodes corresponds to the second pixel.