The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2016

Filed:

Jul. 05, 2013
Applicant:

Intel Ip Corporation, Santa Clara, CA (US);

Inventors:

Mayank Shrivastava, Unterhaching, DE;

Christian Russ, Diedorf, DE;

Assignee:

Intel IP Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0262 (2013.01);
Abstract

A semiconductor device including: a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type adjacent to the first region; third and fourth semiconductor regions of the second conductivity type over or at least partially within the first semiconductor region; a fifth semiconductor region of the first conductivity type between the third and fourth semiconductor regions; a first gate over the fifth semiconductor region; sixth and seventh semiconductor regions of the first conductivity type over or at least partially within the second semiconductor region; an eighth semiconductor region of the second conductivity type between the sixth and seventh semiconductor regions; a second gate over the eighth semiconductor region; the third and seventh semiconductor regions coupled to first and second regions of the first gate, respectively, and the fourth and sixth semiconductor regions coupled to first and second regions of the second gate, respectively.


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