The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2016
Filed:
Jan. 20, 2015
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76808 (2013.01);
Abstract
A method for forming an interconnect structure is provided. The method includes providing a substrate. The method also includes forming a dielectric layer on the substrate, and the dielectric layer includes an extreme low-k (ELK) dielectric layer. The method includes forming a via hole in the dielectric layer and forming a photoresist in the via hole and on the dielectric layer. The method also includes removing the photoresist by a plasma process using a CxHyOz gas and forming a conductive structure in the via hole.