The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Apr. 25, 2014
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Wanbing Yi, Singapore, SG;
Yang Hong, Ottobrunn, DE;
Yi Jiang, Singapore, SG;
Francis Poh, Singapore, SG;
Tze Ho Simon Chan, Singapore, SG;
Juan Boon Tan, Singapore, SG;
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Abstract
A method of fabricating an integrated circuit includes depositing a bottom electrode layer, an MTJ layer, and a top electrode layer over a passivation layer and within a trench of the passivation layer and removing portions of the MTJ layer and the top electrode layer to form an MTJ/top electrode stack over the bottom electrode layer and at least partially within portions of the trench having being reopened by said removing. The method further includes forming a further passivation layer over the MTJ/top electrode stack, forming a further ILD layer of the further passivation layer, and reforming a top electrode layer over the ILD layer and over the MTJ/top electrode stack. Still further, the method includes removing portions of the bottom electrode layer, the further passivation layer, the further ILD layer, and the re-formed top electrode layer to form a bottom electrode/MTJ/top electrode stack.