The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Apr. 22, 2013
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/768 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); B05D 1/36 (2006.01); B05D 1/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02118 (2013.01); C23C 16/4408 (2013.01); C23C 16/52 (2013.01); H01L 21/022 (2013.01); H01L 21/02271 (2013.01); H01L 21/02337 (2013.01); H01L 21/02359 (2013.01); H01L 21/76831 (2013.01); H01L 21/76898 (2013.01); B05D 1/36 (2013.01); B05D 1/60 (2013.01); B05D 2490/50 (2013.01); C23C 16/455 (2013.01);
Abstract
A method for depositing a film is provided. In the method, an object to be processed is accommodated in a process chamber, and an insulating film made of a polymer thin film is deposited on a surface of the object to be processed by supplying a first source gas composed of an acid anhydride and a second source gas composed of a diamine into the process chamber that is evacuated. Next, the insulating film is modified so as to have a barrier function by stopping the supply of the second source gas into the process chamber and continuously supplying the first source gas into the process chamber.