The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Dec. 17, 2013
Applicant:
Transphorm Inc., Goleta, CA (US);
Inventors:
Chang Soo Suh, Allen, TX (US);
Umesh Mishra, Montecito, CA (US);
Assignee:
Transphorm Inc., Goleta, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/43 (2006.01);
U.S. Cl.
CPC ...
H01L 29/778 (2013.01); H01L 29/1066 (2013.01); H01L 29/1075 (2013.01); H01L 29/7781 (2013.01); H01L 29/7783 (2013.01); H01L 29/7787 (2013.01); H01L 29/2003 (2013.01); H01L 29/402 (2013.01); H01L 29/41766 (2013.01); H01L 29/432 (2013.01);
Abstract
Enhancement mode III-nitride devices are described. The 2DEG is depleted in the gate region so that the device is unable to conduct current when no bias is applied at the gate. Both gallium face and nitride face devices formed as enhancement mode devices.