The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Nov. 27, 2013
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chung-Liang Cheng, Changhua, TW;
Chien-Hao Tseng, Taichung, TW;
Yen-Yu Chen, Taichung, TW;
Ching-Chia Wu, Taichung, TW;
Chang-Sheng Lee, Shin-Chu, TW;
Wei Zhang, Chupei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for fabricating a semiconductor structure is provided, including: providing a solid precursor having a first average particle size; solving the solid precursor in an organic solvent into an intermediate; recrystallizing the intermediate to form solid granules, wherein the solid granules has a second average particle size larger than the first average particle size; vaporizing the solid granules to form a film-forming gas; and depositing the film-forming gas on a substrate to form a resistance film. A method for modifying a resistance film source in a semiconductor fabrication and a solid precursor delivery system are also provided. The method for fabricating a semiconductor structure in the present disclosure can remove small particles or ultra-small particles from solid precursor, and does not need extra time to dump cracked solid precursor.