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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9343291 B1

PDFFull Text
Date of Patent:
May. 17, 2016

Filed:

May. 12, 2014

Method for forming an interfacial layer on a semiconductor using hydrogen plasma

Applicant:

Tokyo Electron Limited, Minato-ku, Tokyo, JP;

Inventors:

Toru Ito, Nirasaki, JP;

Paul C. McIntyre, Sunnyvale, CA (US);

Assignees:

Tokyo Electron Limited, Tokyo, JP;

The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);

Attorney:
Primary Examiner:

Jae Lee

Assistant Examiner:

Colleen E Snow

Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01J 37/32 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02172 (2013.01); H01L 21/0234 (2013.01); H01L 21/28255 (2013.01); H01L 21/28264 (2013.01); H01J 37/32192 (2013.01); H01L 29/517 (2013.01);
Abstract

Techniques include a method of forming an interfacial passivation layer between a first semiconductor material (such as germanium) and a high-k gate dielectric. Such techniques include using a hydrogen-based plasma formed using a slotted-plane antenna plasma processing system. Such a plasma treatment can be executed with substrate temperatures less than 380 degrees Celsius, and even down to about 200 degrees Celsius or below.

Find Patent Forward Citations

Ito, Toru. (2016). Method for forming an interfacial layer on a semiconductor using hydrogen plasma (U.S. Patent No. 9343291). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9343291

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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