The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Mar. 19, 2014
Hitachi Kokusai Electric Inc., Tokyo, JP;
L'air Liquide, Societe Anonyme Pour L'etude ET L'exploitation Des Procedes Georges Claude, Paris, FR;
Yoshiro Hirose, Toyama, JP;
Norikazu Mizuno, Toyama, JP;
Kazutaka Yanagita, Tsukuba, JP;
Shingo Okubo, Tsukuba, JP;
Abstract
A method of manufacturing a semiconductor device includes forming an oxide film on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas to the substrate; and supplying an ozone gas to the substrate. In the act of supplying the precursor gas, the precursor gas is supplied to the substrate in a state where a catalytic gas is not supplied to the substrate, and in the act of supplying the ozone gas, the ozone gas is supplied to the substrate in a state where an amine-based catalytic gas is supplied to the substrate.