The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Apr. 21, 2014
Globalfoundries Inc., Grand Cayman, KY;
Hari V. Mallela, Poughquag, NY (US);
Edward J. Nowak, Essex Junction, VT (US);
Yunsheng Song, Poughkeepsie, NY (US);
Reinaldo A. Vega, Wappingers Falls, NY (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
Zhijian Yang, Stormville, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A semiconductor memory device including a channel region and a ferromagnetic gate is provided. The channel region can be formed within a semiconductor nanowire. The ferromagnetic gate is programmed with a selected orientation of magnetization by the electrical current that passes through the channel region in one direction or another. The orientation of the magnetization in the ferromagnetic gate can be detected by changes in the threshold voltage of a field effect transistor employing the ferromagnetic gate as a gate electrode, or can be detected by the resistance of the channel region that changes with the orientation of the magnetization in a two terminal device.