The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Jul. 31, 2014
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Michael Smith, Boise, ID (US);
Vladimir Mikhalev, Boise, ID (US);
Puneet Sharma, Boise, ID (US);
Zia Alan Shafi, Boise, ID (US);
Henry Jim Fulford, Meridian, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/266 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 27/105 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7833 (2013.01); H01L 21/266 (2013.01); H01L 29/0634 (2013.01); H01L 29/0692 (2013.01); H01L 29/0847 (2013.01); H01L 29/423 (2013.01); H01L 29/6659 (2013.01); H01L 27/105 (2013.01);
Abstract
A transistor includes a gate dielectric over a semiconductor having a first conductivity type, a control gate over the gate dielectric, source and drain regions having a second conductivity type in the semiconductor having the first conductivity type, and strips having the second conductivity type within the semiconductor having the first conductivity type and interposed between the control gate and at least one of the source and drain regions.