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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9337271 B1

PDFFull Text
Date of Patent:
May. 10, 2016

Filed:

Dec. 19, 2013

Silicon-carbide semiconductor device and manufacturing method therefor

Applicant:

Mitsubishi Electric Corporation, Chiyoda-ku, JP;

Inventors:

Yutaka Fukui, Tokyo, JP;

Yasuhiro Kagawa, Tokyo, JP;

Rina Tanaka, Tokyo, JP;

Yuji Abe, Tokyo, JP;

Masayuki Imaizumi, Tokyo, JP;

Assignee:

Mitsubishi Electric Corporation, Tokyo, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

William Coleman

Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 21/04 (2006.01); H01L 29/739 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 29/04 (2006.01); H01L 21/265 (2006.01); H01L 21/28 (2006.01); H01L 29/12 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1095 (2013.01); H01L 21/047 (2013.01); H01L 21/26586 (2013.01); H01L 21/28 (2013.01); H01L 29/045 (2013.01); H01L 29/0696 (2013.01); H01L 29/1033 (2013.01); H01L 29/12 (2013.01); H01L 29/1608 (2013.01); H01L 29/4236 (2013.01); H01L 29/66068 (2013.01); H01L 29/66348 (2013.01); H01L 29/66734 (2013.01); H01L 29/7397 (2013.01); H01L 29/78 (2013.01); H01L 29/7813 (2013.01); H01L 29/0623 (2013.01); H01L 29/1041 (2013.01); H01L 29/1045 (2013.01);
Abstract

It is an object of the present invention to provide a silicon carbide semiconductor device that reduces an influence of an off-angle of a silicon carbide substrate on characteristics of the semiconductor device and achieves improved operational stability and reduced resistance. In a trench-gate silicon carbide MOSFET semiconductor device formed on the silicon carbide semiconductor substrate having the off-angle, a low-channel doped region is provided on a first sidewall surface side of the trench in a well region, and a high-channel doped region having an effective acceptor concentration lower than that of the low-channel doped region is provided on a second sidewall surface side of the trench in the well region.

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