The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Dec. 18, 2013
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Yu Chao Lin, Hsin-Chu, TW;
Ming-Ching Chang, Hsin-Chu, TW;
I-Yin Lu, Kaohsiung, TW;
Jih-Jse Lin, Sijhih, TW;
Chao-Cheng Chen, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/02 (2006.01); H01L 27/092 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 21/3213 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0922 (2013.01); H01L 21/31144 (2013.01); H01L 21/32135 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823821 (2013.01); H01L 21/823828 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01);
Abstract
Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes providing a workpiece including a gate dielectric and a gate disposed over the gate dielectric, and reshaping a top surface of the gate to form a gate with a rounded profile.