The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2016

Filed:

Sep. 29, 2014
Applicant:

Alpha and Omega Semiconductor (Cayman) Ltd., Sunnyvale, CA (US);

Inventors:

Yan Huo, Shanghai, CN;

Hamza Yilmaz, Saratoga, CA (US);

Jun Lu, San Jose, CA (US);

Ming-Chen Lu, Shanghai, CN;

Zhi Qiang Niu, Santa Clara, CA (US);

Yan Xun Xue, Los Gatos, CA (US);

Demei Gong, Shanghai, CN;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 21/78 (2006.01); H01L 21/48 (2006.01); H01L 21/3213 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49541 (2013.01); H01L 21/31053 (2013.01); H01L 21/3213 (2013.01); H01L 21/4842 (2013.01); H01L 21/565 (2013.01); H01L 21/78 (2013.01); H01L 23/3107 (2013.01); H01L 23/49513 (2013.01); H01L 24/11 (2013.01); H01L 24/14 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/83 (2013.01); H01L 24/97 (2013.01); H01L 2224/1184 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/73153 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/05432 (2013.01);
Abstract

An ultrathin power semiconductor package with high thermal dissipation performance and its preparation method are disclosed. The package includes a lead frame unit with a staggered structure including an upper section and a lower section. A thin layer is attached on the surface of the lead frame unit having a plurality of contact holes on the upper section and at least one opening on the lower section. A semiconductor chip is attached on the opening on the lower section of the lead frame unit and then a plurality of metal bumps are deposited, where one metal bump is formed on each contact hole on the upper section and on each of the electrodes on the top surface of the semiconductor chip.


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