The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Sep. 20, 2012
Ulvac, Inc., Chigasaki-shi, JP;
Junichi Hamaguchi, Susono, JP;
Shuji Kodaira, Susono, JP;
Yuta Sakamoto, Susono, JP;
Akifumi Sano, Susono, JP;
Koukichi Kamada, Susono, JP;
Yoshiyuki Kadokura, Susono, JP;
Joji Hiroishi, Susono, JP;
Yukinobu Numata, Susono, JP;
Koji Suzuki, Susono, JP;
ULVAC, INC., Chigasaki-Shi, JP;
Abstract
A method of manufacturing a semiconductor device includes a groove portion formation process of forming a groove portion in a base body, a bather layer formation process of forming a barrier layer covering at least the inner wall surface of the groove portion, a seed layer formation process of forming a seed layer covering the barrier layer, and a seed layer melting process of causing the seed layer to be melted using the reflow method. The seed layer is made of Cu.