The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2016

Filed:

Jul. 17, 2015
Applicants:

Moon-kyu Park, Hwaseong-si, KR;

Oh-seong Kwon, Hwaseong-si, KR;

Sung-kee Han, Seoul, KR;

Sang-jin Hyun, Suwon-si, KR;

Inventors:

Moon-Kyu Park, Hwaseong-si, KR;

Oh-Seong Kwon, Hwaseong-si, KR;

Sung-Kee Han, Seoul, KR;

Sang-Jin Hyun, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3215 (2006.01); H01L 29/40 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3215 (2013.01); H01L 21/28088 (2013.01); H01L 29/401 (2013.01);
Abstract

Provided are methods for fabricating semiconductor devices. The methods for fabricating the semiconductor devices may include forming a first interlayer insulation film including a trench on a substrate, forming a high-k layer along an inner sidewall and a bottom surface of the trench, forming a first work function control film including impurities along the high-k layer, removing the impurities from the first work function control film to reduce surface resistance of the first work function control film by about 30% to about 60% and forming a gate metal in the trench.

Published as:
US2016020118A1; KR20160011019A; US9337057B2; KR102262887B1;

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