The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
May. 24, 2013
Air Products and Chemicals, Inc., Allentown, PA (US);
Manchao Xiao, San Diego, CA (US);
Xinjian Lei, Vista, PA (US);
Daniel P. Spence, Carlsbad, CA (US);
Haripin Chandra, Vista, CA (US);
Bing Han, Beijing, CN;
Mark Leonard O'Neill, San Marcos, CA (US);
Steven Gerard Mayorga, Oceanside, CA (US);
Anupama Mallikarjunan, San Marcos, CA (US);
Air Products and Chemicals, Inc., Allentown, PA (US);
Abstract
A method for forming a silicon-containing film on at least one surface of a substrate by a deposition process selected from a chemical vapor deposition process and an atomic layer deposition process, the method comprising: providing the at least one surface of the substrate in a reaction chamber; introducing at least one organoaminodisilane precursor comprising a Si—N bond, a Si—Si bond, and a Si—Hgroup represented by the following Formula I below: wherein Rand Rare defined herein; and introducing a nitrogen-containing source into the reactor wherein the at least one organoaminodisilane precursor and the nitrogen-containing source react to form the film on the at least one surface.