The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2016

Filed:

May. 09, 2014
Applicant:

Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);

Inventors:

Ludovic Godet, Sunnyvale, CA (US);

Daniel Distaso, Merrimac, MA (US);

Nini Munoz, Ithaca, NY (US);

Tristan Ma, Lexington, MA (US);

Yu Liu, Rockport, MA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01J 37/32 (2006.01); H01L 43/12 (2006.01); C23C 14/54 (2006.01); C23C 14/34 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32146 (2013.01); C23C 14/3485 (2013.01); C23C 14/54 (2013.01); H01L 43/12 (2013.01); H01J 2237/3343 (2013.01);
Abstract

In one embodiment a method of etching a substrate includes directing a first ion beam to the substrate through an extraction plate of a processing apparatus using a first set of control settings of the processing apparatus. The method may further include detecting a signal from the substrate that indicates a change in material being etched by the first ion beam from a first material to a second material, adjusting control settings of the processing apparatus to a second set of control settings different from the first set of control settings based on the second material, and directing a second ion beam to the substrate through the extraction plate using the second set of control settings.


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