The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Jan. 24, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0259 (2013.01); G06F 17/5036 (2013.01); G06F 17/5081 (2013.01); G06F 17/5068 (2013.01);
Abstract
A method of detecting a parasitic transistor detecting is provided. The method includes extracting several diodes from a selected area, selecting at least one diode pair from the diodes in accordance with signals connected to the diodes, and filtering the at least one diode pair in accordance with a threshold distance to determine whether at least one parasitic transistor is obtained.
Tsai, Ming-Huei. (2016). Method and computer-readable medium for detecting parasitic transistors by utilizing equivalent circuit and threshold distance (U.S. Patent No. 9331066). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9331066
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile