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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9331064 B1

PDFFull Text
Date of Patent:
May. 03, 2016

Filed:

Jun. 18, 2015

Fin diode structure

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chang-Tzu Wang, Taoyuan, TW;

Ping-Chen Chang, Pingtung County, TW;

Tien-Hao Tang, Hsinchu, TW;

Kuan-Cheng Su, Taipei, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:

Winston Hsu

Scott Margo

Primary Examiner:

Cuong Q Nguyen

Assistant Examiner:

Nishath Yasmeen

Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 27/02 (2006.01); H01L 29/861 (2006.01); H01L 21/76 (2006.01); H01L 29/78 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 21/22 (2006.01); H01L 21/265 (2006.01); H01L 21/306 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 21/22 (2013.01); H01L 21/265 (2013.01); H01L 21/30604 (2013.01); H01L 21/76 (2013.01); H01L 27/0629 (2013.01); H01L 29/0642 (2013.01); H01L 29/0649 (2013.01); H01L 29/0657 (2013.01); H01L 29/0692 (2013.01); H01L 29/6609 (2013.01); H01L 29/66136 (2013.01); H01L 29/785 (2013.01); H01L 29/861 (2013.01); H01L 29/1606 (2013.01); H01L 29/2003 (2013.01);
Abstract

A fin diode structure includes a doped well formed in a substrate, a plurality of fins of first conductivity type and a plurality of fins of second conductivity type protruding from the doped well isolated from ins of first conductivity type by STIs, at least one doped region of first conductivity type in the substrate between the fins of first conductivity type, the STIs and the doped well and connecting with the fins of first conductivity type, and at least one doped region of second conductivity type in the substrate between the fins of second conductivity type, the STIs and the doped well and connecting with the fins of second conductivity type. The doping concentration of the fins of first conductivity type is greater than that of the doped region of first conductivity type whose doping concentration is greater than that of the doped well of first conductivity type.

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