The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2016

Filed:

Mar. 28, 2014
Applicant:

Stats Chippac, Ltd., Singapore, SG;

Inventors:

Zigmund R. Camacho, Singapore, SG;

Bartholomew Liao, Singapore, SG;

Sheila Marie L. Alvarez, Singapore, SG;

HeeJo Chi, Kyoungki-do, KR;

Kelvin Dao, Singapore, SG;

Assignee:

STATS ChipPAC, Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 23/538 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3107 (2013.01); H01L 21/4846 (2013.01); H01L 21/56 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/76895 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/49827 (2013.01); H01L 23/5389 (2013.01); H01L 23/562 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/13023 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01);
Abstract

A semiconductor device has a semiconductor die and encapsulant deposited over the semiconductor die. An insulating layer is formed over the semiconductor die and encapsulant. A first channel including a first conductive surface is formed in the insulating layer by laser radiation. A laser-activated catalyst is infused in the insulating layer to form the first conductive surface in the first channel upon laser radiation. A vertical interconnect is formed through the encapsulant. A first conductive layer is formed in the first channel over the first conductive surface. A second channel including a second conductive surface is formed in the encapsulant by laser radiation. The catalyst is infused in the encapsulant to form the second conductive surface in the second channel upon laser radiation. A second conductive layer is formed in the second channel over the second conductive surface. An interconnect structure is formed over the first conductive layer.


Find Patent Forward Citations

Camacho, Zigmund. (2016). Semiconductor device and method of forming rdl and vertical interconnect by laser direct structuring (U.S. Patent No. 9330994). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9330994

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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