The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2016

Filed:

Feb. 17, 2014
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Hua-Hsin Yu, Hsinchu, TW;

Hsiu Fen Peng, Hsinchu County, TW;

Hau-Tai Shieh, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 14/00 (2006.01); G11C 5/06 (2006.01); G11C 5/02 (2006.01);
U.S. Cl.
CPC ...
G11C 5/06 (2013.01); G11C 5/02 (2013.01);
Abstract

A circuit comprises a first transistor and a second transistor in a strap cell region between a first memory array and a second memory array of a memory device. The first transistor includes a first node connected to a first data line, and a second node connected to a second data line. The first node and the second node of the first transistor are complementary to each other in voltage level. Further, the second transistor includes a first node connected to the second data line, and a second node connected to the first data line. The first node and the second node of the second transistor are complementary to each other in voltage level.


Find Patent Forward Citations

Yu, Hua-Hsin. (2016). Circuits in strap cell regions (U.S. Patent No. 9330731). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9330731

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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