The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2016

Filed:

Jan. 11, 2013
Applicant:

Jsr Corporation, Tokyo, JP;

Inventors:

Yusuke Anno, Tokyo, JP;

Takashi Mori, Tokyo, JP;

Satoshi Dei, Tokyo, JP;

Kazunori Takanashi, Tokyo, JP;

Yushi Matsumura, Tokyo, JP;

Shin-ya Minegishi, Tokyo, JP;

Assignee:

JSR CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 7/075 (2006.01); G03F 7/09 (2006.01); H01L 21/02 (2006.01); C08K 5/34 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0757 (2013.01); C08K 5/34 (2013.01); G03F 7/0752 (2013.01); G03F 7/091 (2013.01); G03F 7/20 (2013.01); H01L 21/02126 (2013.01); H01L 21/02216 (2013.01);
Abstract

A polysiloxane composition includes a polysiloxane, and a first compound. The first compound includes a nitrogen-containing heterocyclic ring structure, and a polar group, an ester group or a combination thereof. A pattern-forming method includes coating the polysiloxane composition on a substrate to be processed to provide a silicon-containing film. A resist composition is coated on the silicon-containing film to provide a resist coating film. The resist coating film is selectively irradiated with a radioactive ray through a photomask to expose the resist coating film. The exposed resist coating film is developed to form a resist pattern. The silicon-containing film and the substrate to be processed are sequentially dry etched using the resist pattern as a mask.


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