The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Sep. 30, 2015
International Business Machines Corporation, Armonk, NY (US);
Stmicroelectronics, Inc., Coppell, TX (US);
Lawrence A. Clevenger, LaGrangeville, NY (US);
Carl J. Radens, LaGrangeville, NY (US);
Richard S. Wise, Newburgh, NY (US);
Edem Wornyo, Danbury, CT (US);
Yiheng Xu, Hopewell Junction, NY (US);
John Zhang, Fishkill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
STMICROELECTRONICS, INC., Coppell, TX (US);
Abstract
An ashing chemistry employing a combination of Cland Nis provided, which removes residual material from sidewalls of a patterned metallic hard mask layer without residue such that the sidewalls of the patterned metallic hard mask layer are vertical. The vertical profiled of the sidewalls of the patterned metallic hard mask layer can be advantageously employed to reduce pattern factor dependency in the etch bias between the pattern transferred into an underlying layer and the pattern as formed on the metallic hard mask layer. Further, the ashing chemistry can be employed to enhance removal of stringers in vertical portions of a metallic material layer.