The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Jan. 22, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Yu-Hao Shih, Yongkang, TW;
Szu-Ying Chen, Taichung, TW;
Hsing-Lung Chen, Kaohsiung, TW;
Jen-Cheng Liu, Hsinchu, TW;
Dun-Nian Yaung, Taipei, TW;
Volume Chien, Sinying, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/0232 (2014.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14685 (2013.01); H01L 27/1464 (2013.01); H01L 27/14629 (2013.01); H01L 31/0232 (2013.01); H01L 31/02327 (2013.01); H01L 31/18 (2013.01);
Abstract
A method of forming an image sensor device where the method includes forming a first dielectric layer on a substrate. The method further includes patterning the first dielectric layer to define an area for a reflective shield, where the area defined for the reflective shield is above a photodiode. Additionally, the method includes forming the reflective shield on the substrate by filling the defined area with a high reflectivity material, and the high reflective material comprises a polymer.