The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2016

Filed:

Jan. 29, 2014
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;

Inventors:

Han-Wen Liao, Taichung, TW;

Chih-Yu Lin, Tainan, TW;

Cherng-Chang Tsuei, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 21/033 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32139 (2013.01); H01L 21/0337 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01); H01L 21/31116 (2013.01);
Abstract

One or more systems and methods for reshaping a hard mask are provided. A semiconductor arrangement comprises one or more structures formed from a layer according to a target dimension, such as a width criterion, a length criterion, a spacing criterion, or other design constraints. To form such a structure, a hard mask is formed over the layer. Responsive to a dimension, such as a width, of the hard mask not corresponding to the target dimension, a first hard mask portion is modified to create a modified hard mask comprising a modified first hard mask portion. In some embodiments, the first hard mask portion is trimmed to decrease the dimension or coated with a coating material to increase the dimension. An etch of the layer is performed through the modified hard mask to create an etched layer comprising an etched portion, such as the structure, corresponding to the target dimension.


Find Patent Forward Citations

Loading…