The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2016

Filed:

Mar. 14, 2013
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Hsin-Hsin Ko, Hsinchu, TW;

Yangsyu Lin, New Taipei, TW;

Chiting Cheng, Taichung, TW;

Cheng Hung Lee, Hsinchu, TW;

Jonathan Tsung-Yung Chang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 11/419 (2006.01);
U.S. Cl.
CPC ...
G11C 11/419 (2013.01);
Abstract

A write assist circuit includes a first switch, a second switch and a bias voltage circuit. The first switch connects a cell supply voltage node of a memory cell to a power supply voltage node in response to a write control signal having a first state, and disconnects the cell supply voltage node from the power supply voltage node in response to the write control signal having a second state. The bias voltage circuit generates, at an output thereof, an adjustable bias voltage lower than the power supply voltage. The second switch connects the cell supply voltage node to the output of the bias voltage circuit in response to the write control signal having the second state, and disconnects the cell supply voltage node from the output of the bias voltage circuit in response to the write control signal having the first state.


Find Patent Forward Citations

Loading…