The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2016

Filed:

Mar. 05, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Woong-Kyu Son, Hwaseong-si, KR;

Kwang-Hoon Kim, Yongin-si, KR;

Deok-Yong Kim, Gunpo-si, KR;

Sung-Soo Moon, Seoul, KR;

Jung-Hoon Byun, Hwaseong-si, KR;

Ji-Hye Lee, Suwon-si, KR;

Choon-Shik Leem, Seoul, KR;

Soo-Bok Chin, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 21/33 (2006.01); G01N 21/21 (2006.01); G03F 7/22 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G01N 21/33 (2013.01); G01N 21/21 (2013.01); G03F 7/70625 (2013.01);
Abstract

The inventive concept provides apparatuses and methods for monitoring semiconductor fabrication processes in real time using polarized light. In some embodiments, the apparatus comprises a light source configured to generate light, a beam splitter configured to reflect the light toward the wafer being processed, an objective polarizer configured to polarize the light reflected toward the wafer and to allow light reflected by the wafer to pass therethrough, a blaze grating configured to separate light reflected by the wafer according to wavelength, an array detector configured to detect the separated light and an analyzer to analyze the three-dimensional profile of the structure/pattern being formed in the wafer.


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