The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2016

Filed:

Apr. 30, 2010
Applicants:

Hiroki Yasuda, Kanagawa, JP;

Ryoichi Kimizuka, Tokyo, JP;

Tatsuji Takasu, Tokyo, JP;

Takuro Sato, Kanagawa, JP;

Hiroshi Ishizuka, Kanagawa, JP;

Yasuhiro Ogo, Hanoi, VN;

Yuto Oyama, Kanagawa, JP;

Yu Tonooka, Tokyo, JP;

Mikiko Kosaka, Kanagawa, JP;

Aya Shimomura, Kanagawa, JP;

Yumiko Shimizu, Kanagawa, JP;

Inventors:

Hiroki Yasuda, Kanagawa, JP;

Ryoichi Kimizuka, Tokyo, JP;

Tatsuji Takasu, Tokyo, JP;

Takuro Sato, Kanagawa, JP;

Hiroshi Ishizuka, Kanagawa, JP;

Yasuhiro Ogo, Hanoi, VN;

Yuto Oyama, Kanagawa, JP;

Yu Tonooka, Tokyo, JP;

Mikiko Kosaka, Kanagawa, JP;

Aya Shimomura, Kanagawa, JP;

Yumiko Shimizu, Kanagawa, JP;

Assignee:

JCU CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C25D 3/38 (2006.01); C07D 295/08 (2006.01); C07D 295/088 (2006.01); H01L 21/768 (2006.01); H01L 21/288 (2006.01); H05K 3/42 (2006.01); H05K 3/46 (2006.01);
U.S. Cl.
CPC ...
C07D 295/08 (2013.01); C07D 295/088 (2013.01); C25D 3/38 (2013.01); H01L 21/2885 (2013.01); H01L 21/76898 (2013.01); H05K 3/423 (2013.01); H05K 3/421 (2013.01); H05K 3/4644 (2013.01); H05K 2201/09509 (2013.01); H05K 2201/09563 (2013.01);
Abstract

Provided is a copper plating technique that enables the filling of high aspect-ratio via-holes and through-holes in semiconductor substrates such as silicon substrates, organic material substrates or ceramic substrates. The disclosed technique involves a tertiary amine compound, which is obtained by reacting a heterocyclic compound with the epoxy group of a glycidyl ether group of a compound that has three or more glycidyl ether groups, and a quaternary amine compound thereof, as well as a copper plating additive, a copper plating bath, and a copper plating method employing the compounds.


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