The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Oct. 06, 2014
Applicant:
Intermolecular, Inc., San Jose, CA (US);
Inventor:
Prashant B. Phatak, San Jose, CA (US);
Assignee:
Intermolecular, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/28 (2006.01); H01L 49/02 (2006.01); H01L 27/108 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 28/75 (2013.01); H01L 27/108 (2013.01); H01L 27/10805 (2013.01); H01L 28/65 (2013.01); H01L 21/02197 (2013.01); H01L 21/2855 (2013.01);
Abstract
In some embodiments, a metal oxide second electrode material is formed as part of a MIM DRAM capacitor stack. The second electrode material is doped with one or more dopants. The dopants may influence the crystallinity, resistivity, and/or work function of the second electrode material. The dopants may be uniformly distributed throughout the second electrode material or may be distributed with a gradient in their concentration profile.