The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2016

Filed:

Jul. 01, 2015
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Mu-Chin Chen, Taichung, TW;

Yuan-Sheng Chiang, Hsinchu, TW;

Chi-Sheng Hsiung, Taichung, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01L 21/32139 (2013.01); H01L 21/76843 (2013.01); H01L 21/76885 (2013.01); H01L 23/5283 (2013.01); H01L 23/53223 (2013.01); H01L 23/5329 (2013.01); H01L 23/53228 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method of fabricating a conductive line of a semiconductor device is disclosed. The method includes the steps of: sequentially forming a conductive material layer and a mask on a semiconductor substrate, wherein a thickness of the conductive material layer is between 30000 angstroms (Å) and 90000 angstrom (Å); performing a first etching process to remove a part of the conductive material layer to form at least an upper side; and performing a second etching process to remove a part of the conductive material layer to form at least a lower side, wherein a curvature of the upper side is different from a curvature of the lower side.


Find Patent Forward Citations

Chen, Mu-Chin. (2016). Method of fabricating conductive line of a semiconductor device (U.S. Patent No. 9318381). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9318381

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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