The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Jun. 19, 2015
Ultratech, Inc., San Jose, CA (US);
Arthur W. Zafiropoulo, Atherton, CA (US);
Mark J. Sowa, Medford, MA (US);
Ultratech, Inc., San Jose, CA (US);
Abstract
A method of performing a radical-enhanced atomic-layer deposition process on a surface of a substrate that resides within an interior of a reactor chamber is disclosed. The method includes forming plasma from a gas mixture consisting of CFand O, wherein the CFis present in a concentration in the range from 0.1 vol % to 10 vol %. The plasma formed from the gas mixture generates oxygen radicals O* faster than if there were no CFpresent in the gas mixture. The method also includes feeding the oxygen radicals and a precursor gas sequentially into the interior of the reactor chamber to form an oxide film on the surface of the substrate. A system for performing the radical-enhanced atomic-layer deposition process using the rapidly formed oxygen radicals is also disclosed.