The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Jul. 20, 2012
Peter H. Aaen, Phoenix, AZ (US);
David J. Dougherty, Tempe, AZ (US);
Manuel F. Romero, Chandler, AZ (US);
Lakshminarayan Viswanathan, Phoenix, AZ (US);
Peter H. Aaen, Phoenix, AZ (US);
David J. Dougherty, Tempe, AZ (US);
Manuel F. Romero, Chandler, AZ (US);
Lakshminarayan Viswanathan, Phoenix, AZ (US);
FREESCALE SEMICONDUCTOR, INC., Austin, TX (US);
Abstract
A single semiconductor device package that reduces electromagnetic coupling between elements of a semiconductor device embodied within the package is provided. For a dual-path amplifier, such as a Doherty power amplifier, an isolation feature that separates carrier amplifier elements from peaking amplifier elements is included within the semiconductor device package. The isolation feature can take the form of a structure that is constructed of a conductive material coupled to ground and which separates the elements of the amplifier. The isolation feature can be included in a variety of semiconductor packages, including air cavity packages and overmolded packages. Through the use of the isolation feature provided by embodiments of the present invention a significant improvement in signal isolation between amplifier elements is realized, thereby improving performance of the dual-path amplifier.